q?v~zy??q?v?_ra]q{??qcabeq HCS12NK65V bv dss = 650 v r ds(on) typ = 0.34
i d =12a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 32 nc (typ.) ? extended safe operating area ? lower r ds(on) :
(typ.) @v gs =10v ? 100% avalanche tested ? rohs compliant features absolute maximum ratings t c =25 e unless otherwise specified HCS12NK65V 650v n-channel super junction mosfet symbol parameter value units v dss drain-source voltage 650 v i d drain current ? continuous (t c = 25 e ) 12* a drain current ? continuous (t c = 100 e ) 7.4* a i dm drain current ? pulsed (note 1) 48* a v gs gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 200 mj i ar avalanche current (note 1) 4a e ar repetitive avalanche energy (note 1) 1mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 33 w 0.26 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 3.8 e /w r ja junction-to-ambient -- 80 jan 2014 1.gate 2. drain 3. source 2 1 3 to-220f * drain current limited by maximum junction temperature
q?v~zy??q?v?_ra]q{??qcabeq HCS12NK65V electrical characteristics t j =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 12 a i sm pulsed source-drain diode forward current -- -- 48 v sd source-drain diode forward voltage i s = 12 a, v gs = 0 v -- -- 1.2 v trr reverse recovery time i s = 12 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 360 -- qrr reverse recovery charge -- 3.5 -- & symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 3.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6 a -- 0.34 0.38 ? g fs forward transconductance v ds = 10 v, i d = 6 a q -- 10 -- ?q on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 650 -- -- v i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v -- -- 1 3 v ds = 520 v, t c = 125 e -- -- 10 3 i gss gate-body leakage current v gs = 20 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 50 v, v gs = 0 v, f = 1.0 mhz -- 1340 1740 ? c oss output capacitance -- 215 280 ? c rss reverse transfer capacitance -- 6 8 ? dynamic characteristics t d(on) turn-on time v ds = 325 v, i d = 12 a, r g = 25 ? (note 4,5) -- 25 60 t r turn-on rise time -- 60 130 t d(off) turn-off delay time -- 180 370 t f turn-off fall time -- 70 150 q g total gate charge v ds = 520 v, i d = 12 a, v gs = 10 v (note 4,5) -- 32 42 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 10 -- nc switching characteristics source-drain diode maximum ratings and characteristics package marking and ordering information device marking week marking package packing quantity rohs status HCS12NK65V ywwx to-220f tube 50 pb free HCS12NK65V ywwxg to-220f tube 50 halogen free notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=2.6mh, i as =12a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature
q?v~zy??q?v?_ra]q{??qcabeq HCS12NK65V typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 9 9
q?v~zy??q?v?_ra]q{??qcabeq HCS12NK65V typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve 25 50 75 100 125 150 0 3 6 9 12 i d , drain current [a] t j , junction temperature [ o c]
q?v~zy??q?v?_ra]q{??qcabeq HCS12NK65V fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]q{??qcabeq HCS12NK65V fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]q{??qcabeq HCS12NK65V package dimension 0.70 0.20 0.20 3.30 0.20 15.87 0.20 12.42 0.20 2.54typ 6.68 0.20 0.80 0.20 1.47max 2.54 0.20 0.20 0.50 0.20 2.76 0.20 2.54typ 9.75 0.20 3 0.20 { v t y y w m g
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